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| AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago Technologies' AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42035 bipolar transistor is fabricated using Avago's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features * HighOutputPower: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz * HighGainat1dBCompression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz * LowNoiseFigure: 1.9 dB Typical NFO at 2.0 GHz * HighGain-BandwidthProduct:8.0 GHz Typical fT * CostEffectiveCeramicMicrostripPackage 35micro-XPackage AT-42035AbsoluteMaximumRatings [1] Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature[4] Units V V V mA mW C C Absolute Maximum 1.5 20 12 80 600 150 -65 to 150 ThermalResistance [2,5]: jc = 175C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25C. 3. Derate at 5.7 mW/C for Tc > 95C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. ElectricalSpecifications,TA=25C Symbol |S 21E| 2 P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB ParametersandTestConditions[1] Insertion Power Gain; VCE = 8 V, IC = 35 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB dB GHz -- A A pF Min. 10.0 Typ. 11.0 5.0 21.0 20.5 14.0 9.5 2.0 3.0 13.5 10.0 8.0 Max. 30 150 270 0.2 2.0 0.28 Notes: 1. For this test, the emitter is grounded. 2 AT-42035TypicalPerformance,TA=25C 20 P1 dB (dBm) 1.0 GHz 24 2.0 GHz 24 P1 dB (dBm) 20 16 12 P1dB 10 V 6V 4V 16 |S21E|2 GAIN (dB) 12 8 20 16 12 P1dB 4.0 GHz 2.0 GHz 2.0 GHz 16 G1 dB (dB) G1dB 4.0 GHz G1 dB (dB) 4.0 GHz 4 0 8 4 14 12 10 0 G1dB 10 V 6V 4V 0 10 20 30 IC (mA) 40 50 0 10 20 30 IC (mA) 40 50 10 20 30 IC (mA) 40 50 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 40 35 30 GAIN (dB) 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 MAG |S21E|2 MSG Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 24 21 18 GAIN (dB) 15 12 9 6 3 0 0.5 1.0 2.0 NFO GA Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 4 3 2 1 NFO (dB) 0 3.0 4.0 5.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 3 AT-42035TypicalScatteringParameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .72 .59 .56 .56 .58 .59 .61 .63 .63 .63 .64 .67 .72 -46 -137 -171 169 155 147 137 128 117 106 93 79 70 28.3 20.9 15.4 12.1 9.7 8.0 6.5 5.2 4.0 3.1 2.3 1.5 0.6 26.09 11.13 5.91 4.03 3.06 2.50 2.10 1.82 1.60 1.43 1.30 1.19 1.07 152 102 80 67 55 48 38 27 17 7 -3 -13 -23 dB -37.0 -31.0 -28.2 -26.6 -24.2 -22.6 -20.8 -19.6 -18.0 -16.5 -15.4 -14.3 -13.4 S12 Mag. .014 .028 .039 .047 .062 .074 .092 .105 .126 .149 .169 .193 .215 Ang. 73 44 47 52 55 61 65 62 57 53 48 41 35 S22 Mag. Ang. .92 .58 .51 .50 .48 .47 .46 .47 .49 .51 .52 .51 .46 -14 -27 -29 -33 -38 -42 -51 -63 -72 -80 -87 -94 -105 AT-42035TypicalScatteringParameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .50 .52 .53 .53 .55 .57 .59 .60 .60 .60 .61 .64 .69 -88 -164 174 160 148 142 134 125 116 104 92 79 70 33.2 22.4 16.6 13.1 10.8 9.0 7.5 6.3 5.2 4.2 3.4 2.6 1.7 45.64 13.24 6.75 4.55 3.45 2.81 2.37 2.06 1.81 1.62 1.47 1.35 1.21 135 92 76 64 53 47 37 27 17 7 -2 -13 -23 dB -42.0 -32.8 -28.2 -25.6 -23.2 -21.6 -20.0 -18.4 -17.0 -16.0 -14.9 -14.1 -13.2 S12 Mag. .008 .023 .039 .053 .069 .084 .101 .120 .141 .158 .179 .198 .219 Ang. 68 57 63 66 65 67 64 61 57 50 45 37 30 S22 Mag. Ang. .77 .45 .42 .41 .41 .39 .38 .39 .41 .43 .44 .43 .38 -22 -25 -26 -30 -36 -40 -49 -61 -71 -78 -84 -91 -102 A model for this device is available in the DEVICE MODELS section. AT-42035NoiseParameters:VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB opt Ang 10 66 150 -178 -110 Mag .04 .04 .07 .20 .51 RN/50 0.13 0.12 0.12 0.12 0.36 1.0 1.1 1.3 2.0 3.0 4 OrderingInformation PartNumbers AT-42035G No.ofDevices 100 35micro-XPackageDimensions .085 2.15 4 EMITTER .083 DIA. 2.11 COLLECTOR 3 .020 .508 2 EMITTER Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 1 016 .057 .010 1.45 .25 .100 2.54 .022 .56 .455 .030 11.54 .75 .006 .002 .15 .05 420 BASE For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright (c) 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2652EN AV02-0299EN - April 29, 2008 |
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